Kinetic Monte Carlo Study on Carbon Trapping Effect with Pre-amorphized Silicon

We report our kinetic Monte Carlo (kMC) study of the impact of carbon co-implant on the pre-amorphization implant (PAI) process. We employed both BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant profile and kMC method for the simulation of diffusion process during the annealing process. Our simulation study revealed that carbon coimplant process efficiently suppresses the boron diffusion due to the annihilation of interstitials. In addition, we looked into the boron diffusion under the influence of carbon through calculating the carbon reaction with interstitials. Our kMC study implied that the energy of the carbon co-implant influences the boron diffusion due to the enhancement of trapping occurrences of interstitials with boron.